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MLP1N06CLG Power Mosfet Transistor VOLTAGE CLAMPED CURRENT LIMITING MOSFET high power mosfet transistors rf power mosfe

Anterwell Technology Ltd.

MLP1N06CLG Power Mosfet Transistor VOLTAGE CLAMPED CURRENT LIMITING MOSFET high power mosfet transistors rf power mosfe

Brand Name : MOTOROLA

Model Number : MLP1N06CLG

Certification : Original Factory Pack

Place of Origin : Original

MOQ : 20pcs

Price : Negotiation

Payment Terms : T/T, Western Union,PayPal

Supply Ability : 5200PCS

Delivery Time : 1 Day

Packaging Details : please contact me for details

VDSS : Clamped Vdc

VDGR : Clamped Vdc

VGS : ±10 Vdc

ID : Self–limited 1.8 Adc

PD : 40 Watts

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Internally Clamped, Current Limited N–Channel Logic Level Power MOSFET


MLP1N06CLG Power Mosfet Transistor VOLTAGE CLAMPED CURRENT LIMITING MOSFET high power mosfet transistors rf power mosfe These SMARTDISCRETES devices feature current limiting for short circuit protection, an integral gate–to–source clamp for ESD protection and gate–to–drain clamp for over–voltage protection. No additional gate series resistance is required when interfacing to the output of a MCU, but a 40 kΩ gate pulldown resistor is recommended to avoid a floating gate condition.

The internal gate–to–source and gate–to–drain clamps allow the devices to be applied without use of external transient suppression components. The gate–to– source clamp protects the MOSFET input from electrostatic gate voltage stresses up to 2.0 kV. The gate–to–drain clamp protects the MOSFET drain from drain avalanche stresses that occur with inductive loads. This unique design provides voltage clamping that is essentially independent of operating temperature.

• Temperature Compensated Gate–to–Drain Clamp Limits Voltage Stress Applied to the Device and Protects the Load From Overvoltage

• Integrated ESD Diode Protection

• Controlled Switching Minimizes RFI

• Low Threshold Voltage Enables Interfacing Power Loads to Microprocessors

MAXIMUM RATINGS

Rating Symbol Value Unit
Drain–to–Source Voltage VDSS Clamped Vdc

Drain–to–Gate Voltage

(RGS = 1.0 MΩ)

VDGR Clamped Vdc

Gate–to–Source Voltage

— Continuous

VGS ±10 Vdc
Drain Current — Continuous Drain Current — Single Pulse

ID

IDM

Self–limited 1.8 Adc
Total Power Dissipation PD 40 Watts
Electrostatic Discharge Voltage (Human Body Model) ESD 2.0 kV
Operating and Storage Junction Temperature Range TJ, Tstg –50 to 150 °C

MLP1N06CLG Power Mosfet Transistor VOLTAGE CLAMPED CURRENT LIMITING MOSFET high power mosfet transistors rf power mosfe

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Product Tags:

multi emitter transistor

      

silicon power transistors

      
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