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IRFP4229PBF Power Mosfet Transistor switching power mosfet PDP SWITCH

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IRFP4229PBF Power Mosfet Transistor switching power mosfet PDP SWITCH

Brand Name : Anterwell

Model Number : IRFP4229PBF

Certification : new & original

Place of Origin : original factory

MOQ : 10pcs

Price : Negotiate

Payment Terms : T/T, Western Union, Paypal

Supply Ability : 7600pcs

Delivery Time : 1 day

Packaging Details : Please contact me for details

Gate-to-Source Voltage : ±30 V

Pulsed Drain Current : 180 A

Repetitive Peak Current : 87 A

Power Dissipation : 310 W

Linear Derating Factor : 2.0 W/°C

Soldering Temperature for 10 seconds : 300 °C

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IRFP4229PbF PDP SWITCH

Features 

• Advanced Process Technology 

• Key Parameters Optimized for PDP Sustain, Energy Recovery and Pass Switch Applications 

• Low EPULSE Rating to Reduce Power Dissipation in PDP Sustain, Energy Recovery and Pass Switch Applications 

• Low QG for Fast Response 

• High Repetitive Peak Current Capability for Reliable Operation 

• Short Fall & Rise Times for Fast Switching

• 175°C Operating Junction Temperature for Improved Ruggedness 

• Repetitive Avalanche Capability for Robustness and Reliability

Description

This HEXFET® Power MOSFET is specifically designed for Sustain; Energy Recovery & Pass switch applications in Plasma Display Panels. This MOSFET utilizes the latest processing techniques to achieve low on-resistance per silicon area and low EPULSE rating. Additional features of this MOSFET are 175°C operating junction temperature and high repetitive peak current capability. These features combine to make this MOSFET a highly efficient, robust and reliable device for PDP driving applications.

Absolute Maximum Ratings

Parameter Max. Units
VGS Gate-to-Source Voltage ±30 V
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 44 A
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 31 A
IDM Pulsed Drain Current 180 A
IRP @ TC = 100°C Repetitive Peak Current 87 A
PD @TC = 25°C Power Dissipation 310 W
PD @TC = 100°C Power Dissipation 150 W
Linear Derating Factor 2.0 W/°C
TJ , TSTG Operating Junction and Storage Temperature Range -40 to + 175 °C
Soldering Temperature for 10 seconds 300 °C
Mounting Torque, 6-32 or M3 Screw 10lbin (1.1Nm) N

IRFP4229PBF Power Mosfet Transistor switching power mosfet PDP SWITCH

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