K4S641632H - UC75 Integrated Circuit Chip 64Mb H die Synchronous SDRAM IC

K4S641632H - UC75 Integrated Circuit Chip 64Mb H die Synchronous SDRAM IC

4M x 4Bit x 4 / 2M x 8Bit x 4 / 1M x 16Bit x 4 Banks Synchronous DRAM

FEATURES

• JEDEC standard 3.3V power supply

• LVTTL compatible with multiplexed address

• Four banks operation

• MRS cycle with address key programs

-. CAS latency (2 & 3)

-. Burst length (1, 2, 4, 8 & Full page)

-. Burst type (Sequential & Interleave)

• All inputs are sampled at the positive going edge of the system clock

• Burst read single-bit write operation

• DQM (x4,x8) & L(U)DQM (x16) for masking

• Auto & self refresh

• 64ms refresh period (4K cycle)

• Pb-free Package

• RoHS compliant

GENERAL DESCRIPTION

The K4S640432H / K4S640832H / K4S641632H is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 4,194,304 words by 4 bits, / 4 x 2,097,152 words by 8 bits, / 4 x 1,048,576 words by 16 bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable burst length and programmable latencies allow the same device to be useful for a variety of high bandwidth, high performance memory system applications.

ABSOLUTE MAXIMUM RATINGS

Note :

Permanent device damage may occur if "ASOLUTE MAXIMUM RATINGS" are exceeded.

Functional operation should be restricted to recommended operating condition.

Exposure to higher than recommended voltage for extended periods of time could affect device reliability.

Package Physical Dimension

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K4S641632H - UC75 Integrated Circuit Chip 64Mb H die Synchronous SDRAM IC Images